Ultra-Thin Titanium Wires for Semiconductor Manufacturing Processes

Front-end Process

Ultra-Thin Titanium wire technology designed to meet the severe environmental requirements of semiconductor manufacturing processes.

By forming ultra-thin titanium wires into meshes and combining them with multilayer sintering technology, we achieve a high-strength integrated structure while leveraging titanium’s inherent corrosion resistance and lightweight properties to provide advanced filtration solutions.
This technology is expected to be applicable to semiconductor manufacturing processes, which require high reliability under severe operating conditions such as contact with chemical solutions and long-term operation.

Features

World-class ultra-thin titanium wire with a diameter of 50 µm
Titanium materials optimized for semiconductor applications
High-strength monolithic structure achieved through mesh forming and sintering processes
Contribution to equipment design through lightweight properties and high specific strength

Material: Commercially pure titanium (Grade 1)
Wire diameter: 50 µm

For titanium, a material known for its difficult workability, we have established drawing technology capable of producing world-class ultra-thin wire with a diameter of 50 µm.
At the laboratory level, we have also verified wire diameters in the 20 µm class and are continuing technological development toward further miniaturization.
High-purity titanium (5N, 4N5) can be applied depending on application requirements and requested properties.

By forming ultra-thin titanium wires into meshes and applying multilayer sintering, we realize a high-strength, integrated filtration structure.
This product is expected to be suitable for applications in semiconductor manufacturing processes where structural stability and reliability are required.

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